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 Silicon Tuning Diode
BB 833
Features Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units q High capacitance ratio
q
Type BB 833
Ordering Code (tape and reel) Q62702-B628
Pin Configuration 1 2 C A
Marking white X
Package SOD-323
Maximum Ratings Parameter Reverse voltage Reverse voltage (R 5 k) Forward current Operating temperature range Storage temperature range Thermal Resistance Junction - ambient Rth JA
Symbol VR VRM IF Top Tstg
Values 30 35 20 - 55 ... + 150
Unit V mA
- 55 ... + 150 C
450
K/W
Semiconductor Group
1
04.96
BB 833
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Reverse current VR = 30 V VR = 30 V, TA = 85 C Diode capacitance f = 1 MHz,VR = 1 V VR = 28 V Capacitance ratio f = 1 MHz, VR = 1 V, 28 V Capacitance matching f = 1 MHz, VR = 1 V ... 28 V Series resistance CT = 9 pF, f = 470 MHz Series inductance Symbol min. IR - - CT 8.5 0.6 CT1 CT28
CT
Values typ. - - 9.3 0.75 12.4 - 1.8 - max.
Unit nA 20 500 pF 10 0.9 - 3 - - - % nH
11 - - -
CT rs Ls
Diode capacitance CT = f (VR) f = 1 MHz
Semiconductor Group
2


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